SF5G49,sf5j49,uSF5G49,usf5j49 2002-02-05 1 toshiba thyristor silicon planar type SF5G49,sf5j49,uSF5G49,usf5j49 medium power control applications repetitive peak off-state voltage: v drm = 400, 600 v repetitive peak reverse voltage: v rrm = 400, 600 v average on-state current: i t (av) = 5 a gate trigger current: i gt = 70 a max maximum ratings characteristics symbol rating unit SF5G49 uSF5G49 400 repetitive peak off-state voltage and repetitive peak reverse voltage (r gk 330 ) sf5j49 usf5j49 v drm v rrm 600 v SF5G49 uSF5G49 500 non-repetitive peak reverse voltage (non-repetitive 5 ms, t j 0~125c, r gk 330 ) sf5j49 usf5j49 v rsm 720 v average on-state current i t (av) 5 a r.m.s on-state current i t (rms) 7.8 a peak one cycle surge on-state current (non-repetitive) i tsm 65 (50 hz) a i 2 t limit value i 2 t 20 a 2 s peak gate power dissipation p gm 0.5 w average gate power dissipation p g (av) 0.05 w peak forward gate voltage v fgm 5 v peak reverse gate voltage v rgm 5 v peak forward gate current i gm 200 ma junction temperature t j 40~125 c storage temperature range t stg 40~125 c note: should be used with gate resistance as follows: unit: mm jedec D jeita D toshiba 13-7f1a weight: 0.36 g (typ.) jedec D jeita D toshiba 13-f2a weight: 0.28 g (typ.) gate anode cathode r gk 330
SF5G49,sf5j49,uSF5G49,usf5j49 2002-02-05 2 electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit repetitive peak off-state current and repetitive peak reverse current i drm i rrm v drm v rrm rated r gk 330 20 a peak on-state voltage v tm i tm 12 a 1.6 v gate trigger voltage v gt 0.8 v gate trigger current i gt v d 6 v, r l 100 r gk 330 3 70 a gate non-trigger voltage v gd v d rated 2/3, tc 125c 0.2 v critical rate of rise of off-state voltage dv/dt v drm rated 2/3, tc 75c r gk 330 , exponential rise 50 v/ s holding current i h r l 100 , r gk 330 2.5 ma thermal resistance (junction to case) r th (j-c) dc 6.0 c/w marking 2 1 f5g49 SF5G49, uSF5G49 1 mark f5j49 type name sf5j49, usf5j49 2 lot number month (starting from alphabet a) year (last decimal digit of the current year) transient thermal impedance r th (j-c) (c/w) time t (s) transient thermal impedance (junction to case) 0.1 0.001 1 10 0.01 0.1 1 10
SF5G49,sf5j49,uSF5G49,usf5j49 2002-02-05 3 i h (tc)/i h (tc 25c) v gt (tc)/v gt (tc 25c) instantaneous on-state voltage v t (v) i t ? v t instantaneous on-state current i t (a) number of cycles at 50 hz and 60 hz surge on-state current (non-repetitive) peak surge on-state current i tsm (a) case temperature tc (c) i gt (tc)/i gt (tc 25c) ? tc (typ.) i gt (tc)/i gt (tc 25c) case temperature tc (c) v gt (tc)/v gt (tc 25c) ? tc (typ.) case temperature tc (c) i h (tc)/i h (tc 25c) ? tc (typ.) gate to cathode resistance r gk (k ) i h ? r gk (typ.) holding current i h (ma) 0.1 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 1 10 100 t j 125c 25c 0.1 50 0 50 100 150 1 10 v d 6 v r l 100 r gk 330 0 60 v d 6 v i tm 1 a r gk 330 20 20 60 100 140 0.5 1.0 1.5 2.0 0.1 0.01 1 10 0.1 1 10 100 i tm 1 a ta 25c 0 50 0 50 100 150 0.5 1.0 1.5 2.0 v d 6 v r l 100 r gk 330 0 1 10 100 20 40 60 80 60 hz 50 rated load
SF5G49,sf5j49,uSF5G49,usf5j49 2002-02-05 4 average on-state power dissipation p t (av) (w) maximum allowable case temperature tc max (c) average on-state current i t (av) (a) p t (av) ? i t (av) average on-state power dissipation p t (av) (w) average on-state current i t (av) (a) tc max ? i t (av) maximum allowable case temperature tc max (c) average on-state current i t (av) (a) p t (av) ? i t (av) average on-state power dissipation p t (av) (w) average on-state current i t (av) (a) tc max ? i t (av) average on-state current i t (av) (a) p t (av) ? i t (av) average on-state current i t (av) (a) tc max ? i t (av) maximum allowable case temperature tc max (c) 30 0 0 1 2 3 4 5 6 7 2 4 6 8 10 60 90 120 180 half sine waveform 180 0 conduction angle 0 0 1 2 3 4 5 6 7 20 40 60 80 100 120 140 30 60 90 120 180 half sine waveform 180 0 conduction angle 16 0 0 2 4 6 8 10 2 4 6 8 10 12 14 1 full sine waveform 360 180 conduction angle 1 2 0 2 60 120 180 240 360 60 0 0 2 4 6 8 10 20 40 60 80 100 120 140 full sine waveform conduction angle 1 2 1 360 180 0 2 120 180 240 360 0 0 2 4 6 8 10 2 4 6 8 10 12 14 16 30 60 90 120 180 dc 360 0 rectangular waveform conduction angle 30 0 0 2 4 6 8 10 20 40 60 80 100 120 140 60 90 120 180 dc 360 0 rectangular waveform conduction angle
SF5G49,sf5j49,uSF5G49,usf5j49 2002-02-05 5 v bo (tc)/v bo (tc 25c) (%) gate to cathode capacitance c gk ( f) dv/dt ? c gk (typ.) critical rate of rise of off-state voltage dv/dt (v/ s) gate to cathode capacitance c gk ( f) dv/dt ? c gk (typ.) critical rate of rise of off-state voltage dv/dt (v/ s) case temperature tc (c) v bo (tc)/v bo (tc 25c) ? tc (typ.) 10 1 10 3 10 2 10 1 10 0 10 0 10 1 10 2 10 3 10 4 c gk ta 75c v d 400 v r gk r gk 100 330 1 k 3.3 k 10 1 10 3 10 2 10 1 10 0 10 0 10 1 10 2 10 3 10 4 c gk ta 100c v d 400 v r gk r gk 100 330 1 k 3.3 k 0 80 r gk 100 330 1 k 10 k 40 0 40 80 120 160 200 20 40 60 80 100 120 3.3 k
SF5G49,sf5j49,uSF5G49,usf5j49 2002-02-05 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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